| PART |
Description |
Maker |
| CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
|
| CM200DU-12F |
Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极
24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRMD26310DJ |
3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT
|
International Rectifier
|
